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to-220ab AUIRF9Z34N
features advanced planar technology p-channel mosfet dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified* s d g absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. v (br)dss -55v r ds(on) max. 0.10 i d -19a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.2 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 -5.0 6.8 180 -10 68 0.45 20 max. -19 -14 -68 -55 to + 175 300 10 lbf in (1.1n m) 2014-8-11 1 www.kersemi.com

s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -55 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.05 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 0.10 v gs(th) gate threshold voltage -2.0 ??? -4.0 v gfs forward transconductance 4.2 ??? ??? s i dss drain-to-source leakage current ??? ??? -25 a ??? ??? -250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 35 q gs gate-to-source charge ??? ??? 79 nc q gd gate-to-drain ("miller") charge ??? ??? 16 t d(on) turn-on delay time ??? 13 ??? t r rise time ??? 55 ??? t d(off) turn-off delay time ??? 30 ??? ns t f fall time ??? 41 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 620 ??? c oss output capacitance ??? 280 ??? pf c rss reverse transfer capacitance ??? 140 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? -19 (body diode) a i sm pulsed source current ??? ??? -68 (body diode) v sd diode forward voltage ??? ??? -1.6 v t rr reverse recovery time ??? 54 82 ns q rr reverse recovery charge ??? 110 160 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = -25v ? = 1.0mhz, see fig. 5 t j = 25c, i f = -10a di/dt = 100a/ s conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -10a v ds = v gs , i d = -250 a v ds = -55v, v gs = 0v v ds = -44v, v gs = 0v, t j = 150c mosfet symbol v dd = -28v i d = -10a r g = 13 t j = 25c, i s = -10a, v gs = 0v showing the integral reverse p-n junction diode. conditions r d = 2.6 , see fig. 10 v gs = 0v conditions v ds = -25v, i d = -10a i d = -10a v ds = -44v v gs = 20v v gs = -20v v gs = -10v, see fig. 6 & 13 2014-8-11 2 www.kersemi.com
qualification information ? to-220 n/a qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m3 (+/- 250v) ??? aec-q101-002 human body model class h1b (+/- 800v) ??? aec-q101-001
2014-8-11 3 www.kersemi.com
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23!2' 1 10 100 0.1 1 10 100 d ds 20 s pulse width t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 1 10 100 0.1 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20 s pulse width t = 175c c 1 10 100 45678910 t = 25c j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -25v 20 s pulse width ds t = 175c j 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -17a d
2014-8-11 4 www.kersemi.com
4&$ $50!,
23!6' ,1# 65 1, 23!'!1# 5 1, 23!5 71, 0 4 8 12 16 20 0 10203040 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) for test circuit see figure 13 i = -10a v = -44v v = -28v d ds ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source voltage (v) ds d 10 s 100 s 1ms t = 25c t = 175c single pulse c j 0 200 400 600 800 1000 1200 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss
2014-8-11 5 www.kersemi.com
5 ,2$2' 5 ,2$8-$ 4&$ $%-22 $$!9: ' 4&$ $' 1# '2$! 4 /4 1 0.1 % 4 4 89% + - v ds 90% 10% v gs t d(on) t r t d(off) t f 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 5 10 15 20 t , case temperature ( c) i , drain current (a) c d
2014-8-11 6 www.kersemi.com

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- %,3 1#' q g q gs q gd v g charge ()1 d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - <$! -8-$ <$! -2' t p v ( br ) dss i as r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v 0 100 200 300 400 500 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top -4.2a -7.2a bottom -10a d
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 4 ? ? . 81 :8: ? 89%/8 9 %
= )+ ) ? + ". ? ; 6 ? + + < . ) %# = 6 #89%# 6/) 4 >? === 4 &'4# + + ,48 8 7' +%@7%25
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. $ a, a' !"# ' bcb 88c8d8d
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2014-8-11 9 www.kersemi.com
ordering information base part number package type standard pack complete part number form quantity AUIRF9Z34N to-220 tube 50 AUIRF9Z34N
2014-8-11 10 www.kersemi.com

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